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PD-96911
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087 IRHYS593034CM 300K Rads (Si) 0.087 ID -20A -20A
IRHYS597034CM 60V, P-CHANNEL
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TECHNOLOGY
Low-Ohmic TO-257AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -20 -13 -80 75 0.6 20 134 -20 7.5 -4.9 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 4.3 ( Typical )
g
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01/07/05
IRHYS597034CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-60
Typ Max Units
-- -0.066 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.087 -4.0 -- -10 -25 -100 100 45 18 13 25 65 75 50 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -13A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -13A A VDS= -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -20A VDS = -30V VDD = -30V, ID = -20A VGS = -12V, RG = 7.5
BVDSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 10 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1560 565 62 6.5
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = - 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -20 -80 -5.0 100 200
Test Conditions
A
V ns nC Tj = 25C, IS = -20A, VGS = 0V A Tj = 25C, IF =-20A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHYS597034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) A Static Drain-to-Source On-State Resistance(Low-OhmicTO-257AA) Diode Forward Voltage A 100K Rads(Si)1 Min Max -60 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.087 0.087 -5.0 300KRads(Si)2 Min Max -60 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.087 0.087 -5.0 Units V nA
Test Conditions
VGS = 0V, ID = -1.0mA V GS = VDS , ID = -1.0mA VGS =-20V V GS = 20 V VDS = -48V, VGS =0V VGS = -12V, ID =-13A VGS = -12V, ID =-13A VGS = 0V, IS = -20A
A V
1. Part number IRHYS597034CM 2. Part number IRHYS593034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 33.1 - 60 - 60 - 60 - 60 - 60 30.5 - 60 - 60 - 60 - 45 - 25 28.4 - 60 - 60 - 60 -- --
-70 -60 -50 -40 -30 -20 -10 0 0 5 10 VGS 15 20
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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IRHYS597034CM
Pre-Irradiation
100
100
-I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-I D, Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
-5.0V
10
-5.0V
60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -20A
1.5
-I D, Drain-to-Source Current (A)
TJ = 150C
1.0
T J = 25C
0.5
VDS = -25V 15 60s PULSE WIDTH 10 5 5.5 6 6.5 7 7.5 8 8.5 9 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHYS597034CM
2500
-VGS, Gate-to-Source Voltage (V)
2000
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -20A 16 VDS= -48V VDS= -30V VDS= -12V
C, Capacitance (pF)
1500
Ciss
12
1000
Coss
8
500
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60
Crss
0 1 10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100 T J = 150C T J = 25C
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100
10
100s
10
1
1ms
Tc = 25C Tj = 150C Single Pulse 1 10
VGS = 0V 0.1 0 1 2 3 4 5 6 -V SD , Source-to-Drain Voltage (V)
10ms
100 1000
1
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHYS597034CM
Pre-Irradiation
20
V GS RG V GS
V DS
RD
16
-I D, Drain Current (A)
D.U.T.
+
12
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
td(on) tr t d(off) tf
VGS
0 25 50 75 100 125 150 T C , Case Temperature (C)
10%
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
Pre-Irradiation
IRHYS597034CM
VDS
L
250
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
200
VGS -20V
ID -8.9A -12.6A BOTTOM -20A TOP
tp
0.01
150
15V
100
Fig 12a. Unclamped Inductive Test Circuit
I AS
50
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHYS597034CM
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L=0.67mH Peak IL =- 20A, VGS = -12V A ISD - 20A, di/dt -370A/s, VDD - 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -48 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. T O-257AA TABLES S IS A MODIFIED JE DEC OUTLINE T O-257AA.
LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2005
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